Infineon IRL60HS118: A High-Performance 600V Automotive Grade HEXFET Power MOSFET

Release date:2025-10-31 Number of clicks:84

Infineon IRL60HS118: A High-Performance 600V Automotive Grade HEXFET Power MOSFET

The relentless drive towards vehicle electrification demands power semiconductor components that deliver uncompromising performance, ruggedness, and reliability. Addressing these critical needs, the Infineon IRL60HS118 stands out as a premier 600V Automotive Grade HEXFET Power MOSFET engineered to excel in the demanding environments of modern automotive applications.

This MOSFET is built upon Infineon's advanced proprietary HEXFET technology, a cornerstone of its power MOSFET portfolio. The technology is renowned for its low on-state resistance and high switching speed, which are pivotal for enhancing efficiency and power density. The IRL60HS118 boasts an exceptionally low typical on-state resistance (RDS(on)) of just 60mΩ, which directly translates to reduced conduction losses. This efficiency is paramount in applications like DC-DC converters, motor drive systems for electric pumps and fans, and other power switching topologies within 48V systems and main traction inverters, where every watt saved contributes to extended range and reduced thermal management overhead.

Beyond raw performance, the device is specifically designed and qualified for the rigorous AEC-Q101 automotive standard. This certification ensures its robustness against the extreme conditions inherent to automotive operation, including wide temperature fluctuations, mechanical stress, and prolonged reliability demands. The integrated Schottky diode in the TO-220 Fullpak (fully isolated) package is a significant feature. This integration not only saves board space but also enhances the body diode's characteristics, leading to improved reverse recovery performance and greater resilience against parasitic oscillations. The isolated package also simplifies the thermal management and mechanical assembly process.

Furthermore, the high dv/dt rating and avalanche ruggedness of the IRL60HS118 ensure superior stability and longevity in the face of voltage spikes and harsh transients commonly found in automotive electrical systems. This makes it a robust and dependable choice for designers aiming to build systems with high reliability and long service life.

ICGOODFIND: The Infineon IRL60HS118 is a high-efficiency, automotive-qualified power MOSFET that combines low conduction loss, a robust integrated diode, and avalanche ruggedness in an isolated package, making it an optimal solution for demanding high-voltage automotive power conversion and motor control applications.

Keywords: Automotive Grade, Low RDS(on), HEXFET Technology, AEC-Q101, Avalanche Rugged

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