Infineon TDB6HK240N16P: A High-Performance 16 mΩ IGBT Module for Industrial Drives and UPS Applications
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics has led to the continuous evolution of Insulated Gate Bipolar Transistor (IGBT) technology. Addressing these critical demands, the Infineon TDB6HK240N16P stands out as a premier 1200 V, 240 A IGBT module engineered specifically for high-performance applications such as industrial motor drives and uninterruptible power supplies (UPS).
At the core of this module's exceptional performance is its remarkably low nominal on-state voltage drop, characterized by a collector-emitter saturation voltage (VCE(sat)) of just 1.55 V at typical operating conditions. This low saturation voltage is a direct result of its ultra-low typical rated collector-emitter resistance of just 16 mΩ. This minimal resistance is paramount, as it directly translates to significantly reduced conduction losses. In high-current applications, this efficiency gain is substantial, leading to lower operational temperatures, reduced cooling requirements, and ultimately, higher overall system efficiency and power density.
The module leverages Infineon's advanced TRENCHSTOP™ IGBT7 technology, representing the seventh generation of IGBT innovation. This technology delivers an optimal balance between low conduction and switching losses. The IGBT7 chips are specifically designed to operate at higher maximum junction temperatures (Tvj(max) = 175 °C), providing a greater safety margin and enabling more robust and compact designs. The integrated Emitter Controlled 7 (EC7) diode further enhances performance by offering excellent soft reverse recovery characteristics, which minimizes voltage overshoots and electromagnetic interference (EMI), a critical factor for maintaining system stability and compliance.
Designed for rugged industrial environments, the TDB6HK240N16P features a robust and reliable package. Its low-inductance design is crucial for managing high di/dt and dv/dt transitions during switching, ensuring stable operation and protecting the module from potential voltage spikes. The use of AL2O3 (alumina) ceramic substrates with direct copper bonding (DCB) ensures excellent electrical isolation and superior thermal cycling capability, which is essential for the long-term reliability demanded by 24/7 industrial and data center UPS applications.
In application, this module is ideally suited for the power conversion stages of:
Industrial Drives: Providing precise and efficient control for AC motors in automation, pump, and compressor systems.
Uninterruptible Power Supplies (UPS): Serving as a key component in the inverter stage of high-power three-phase UPS systems, ensuring clean and reliable power delivery to critical infrastructure.
ICGOO
The Infineon TDB6HK240N16P is a benchmark in high-power IGBT modules, masterfully combining ultra-low 16 mΩ conduction losses with the cutting-edge advantages of TRENCHSTOP™ IGBT7 technology. Its superior efficiency, high operational temperature capability, and robust construction make it an indispensable component for engineers designing next-generation industrial drives and UPS systems where performance, size, and reliability are non-negotiable.
Keywords:
1. IGBT7 Technology
2. 16 mΩ
3. Industrial Drives
4. UPS Applications
5. High Efficiency
