High-Efficiency Power Conversion with Infineon's 210 mΩ IPL65R210CFD CoolMOS™ CFD2

In the rapidly evolving field of power electronics, achieving higher efficiency and power density remains a critical objective. Infineon’s IPL65R210CFD CoolMOS™ CFD2, with its ultra-low 210 mΩ on-state resistance (RDS(on)), stands out as a pivotal solution for next-generation power conversion systems. Designed with superjunction technology, this MOSFET combines minimal conduction and switching losses, making it especially suitable for high-frequency and high-efficiency applications such as server power supplies, telecom bricks, and industrial converters.

One of the hallmark features of the CoolMOS™ CFD2 series is its integrated fast body diode, which enhances reliability in hard-switching and resonant topologies like LLC converters. This feature significantly reduces reverse recovery losses, contributing to improved thermal performance and system robustness. Furthermore, the device supports higher switching frequencies, enabling the use of smaller passive components and ultimately leading to reduced system size and cost.

The IPL65R210CFD also excels in ease of use, featuring low gate charge (Qg) and excellent switching characteristics that simplify driver design. Its high dv/dt capability and noise immunity ensure stable operation even under demanding conditions. These attributes make it an ideal choice for designers aiming to push the boundaries of efficiency in power supplies and motor drives.

ICGOOODFIND:

The Infineon IPL65R210CFD CoolMOS™ CFD2 sets a new benchmark in power MOSFET technology by delivering exceptional efficiency, thermal performance, and design flexibility—key enablers for the compact and energy-conscious power systems of tomorrow.

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Keywords:

Power Efficiency, Superjunction Technology, Low RDS(on), Fast Body Diode, High-Frequency Switching