Infineon K15T1202: High-Performance IGBT for Power Electronics Applications
The relentless drive for higher efficiency, power density, and reliability in power electronics has consistently pushed semiconductor technology forward. At the heart of many modern high-power systems, from industrial motor drives and renewable energy inverters to uninterruptible power supplies (UPS) and welding equipment, lies the Insulated Gate Bipolar Transistor (IGBT). The Infineon K15T1202 stands out as a prime example of a high-performance IGBT engineered to meet these demanding requirements.
This device is a NPT (Non-Punch Through) trench IGBT, a technology that offers an optimal balance between low saturation voltage and short switching times. The K15T1202 is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 80°C, making it a robust choice for a wide array of medium-power applications operating from three-phase mains. Its low VCE(sat) of typically 1.85 V ensures minimal conduction losses, which is a critical factor for improving overall system efficiency and reducing heat generation.
Beyond its static performance, the switching characteristics of the K15T1202 are equally impressive. The trench cell structure contributes to its excellent switching performance with soft turn-off behavior. This is further enhanced by its positive temperature coefficient of VCE(sat), which simplifies the paralleling of multiple IGBTs for higher current capability, as it promotes even current sharing between devices. Furthermore, the device features a robust and rugged anti-parallel emitter-controlled HEXFRED diode integrated into the same package. This co-packaged diode is optimized for low reverse recovery charge (Qrr) and soft recovery, which is essential for minimizing switching losses and electromagnetic interference (EMI) in inverter circuits.
The module is offered in the industry-standard TO-247 package, providing high power density and excellent thermal performance. This package allows for efficient heat transfer to an external heatsink, enabling the device to handle high power dissipation. The combination of high electrical performance and robust mechanical construction ensures high reliability under strenuous operating conditions, including overloads and short circuits.
ICGOOODFIND: The Infineon K15T1202 is a high-performance 1200V IGBT that excels in power electronics applications by masterfully balancing low conduction losses, excellent switching characteristics, and ruggedness. Its integrated fast recovery diode and positive temperature coefficient make it an efficient and reliable building block for designers seeking to create compact, efficient, and robust power conversion systems.
Keywords: IGBT, High-Performance, Power Electronics, Low Saturation Voltage, Switching Characteristics.
