Analysis of the Infineon BSC117N08NS5ATMA1 OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency, power density, and reliability in modern power electronics has driven significant advancements in semiconductor technology. Among the key enablers are Power MOSFETs, with Infineon's OptiMOS™ 5 family standing as a prime example of innovation. This analysis delves into the specifics of the BSC117N08NS5ATMA1, a device engineered to set new benchmarks in performance for a wide range of applications.

The BSC117N08NS5ATMA1 is an N-channel MOSFET built on Infineon's advanced OptiMOS™ 5 superjunction technology. This technology is the cornerstone of its exceptional characteristics, primarily its ultra-low on-state resistance (R DS(on)) of just 1.7 mΩ (max.) at a gate-source voltage of 10 V. This remarkably low resistance is a critical figure of merit, as it directly translates into reduced conduction losses. When a MOSFET is fully switched on, a lower R DS(on) means less power is wasted as heat, leading to significantly higher efficiency in power conversion stages.

Rated for a drain-source voltage (V DS) of 80 V and a continuous drain current (I D) of 117 A at 25°C, this MOSFET is exceptionally versatile. It is ideally suited for demanding environments such as:

Synchronous Rectification in Switch-Mode Power Supplies (SMPS): Its fast switching speed and low R DS(on) are perfect for secondary-side rectification in server and telecom power units.

Motor Control and Drives: The high current handling capability makes it an excellent choice for driving motors in industrial automation, robotics, and electric vehicles.

DC-DC Converters: In both buck and boost topologies, especially in high-current point-of-load (POL) converters, its efficiency minimizes thermal management challenges.

Beyond its static performance, the OptiMOS™ 5 technology ensures excellent switching behavior. The device features a low gate charge (Q G) and low figure-of-merit (FOM, R DS(on) Q G), which allows for faster switching frequencies. This capability enables designers to reduce the size of passive components like inductors and capacitors, thereby increasing the overall power density of the system. Furthermore, the device offers an enhanced body diode with improved reverse recovery characteristics, which is vital for reducing switching losses in hard-switching applications like power factor correction (PFC).

Housed in a SuperSO8 package, the BSC117N08NS5ATMA1 offers a compact footprint while providing superior thermal performance. The package's low thermal resistance ensures that heat is effectively dissipated from the silicon die to the printed circuit board (PCB), maintaining lower operating temperatures and enhancing long-term reliability.

ICGOO In summary, the Infineon BSC117N08NS5ATMA1 exemplifies the pinnacle of power MOSFET design. Its combination of ultra-low R DS(on), high current capability, fast switching performance, and robust packaging makes it a superior component for engineers aiming to maximize efficiency and power density in next-generation power systems.

Keywords: OptiMOS™ 5, Low R DS(on), Power Efficiency, Synchronous Rectification, SuperSO8