Infineon IPS060N03LG: A High-Performance OptiMOS Power MOSFET for Efficient Power Management

In the realm of modern electronics, achieving high efficiency in power conversion is a paramount objective. The Infineon IPS060N03LG stands out as a premier solution, engineered to meet the rigorous demands of contemporary power management systems. As part of Infineon's esteemed OptiMOS™ power MOSFET family, this device is specifically designed to deliver superior performance, reliability, and efficiency in a compact package.

The IPS060N03LG is a N-channel trench MOSFET built with advanced silicon technology. It is characterized by an exceptionally low on-state resistance (RDS(on)) of just 1.6 mΩ (max. at VGS = 10 V), which is a critical factor in minimizing conduction losses. This ultra-low resistance ensures that less energy is wasted as heat when the device is in its conducting state, directly contributing to higher overall system efficiency. This makes it an ideal choice for high-current applications.

Furthermore, the device boasts an impressive maximum drain current (ID) of 100 A, allowing it to handle significant power loads with ease. Its low gate charge (QG) and optimized switching characteristics enable fast switching speeds, which are essential for high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor drive circuits. The reduction in switching losses complements the low conduction losses, making the IPS060N03LG exceptionally efficient across a wide range of operating conditions.

Packaged in the space-saving SuperSO8 (PG-TDSON-8) housing, this MOSFET offers an excellent power-to-size ratio. This compact footprint is crucial for modern, miniaturized electronic designs where board space is at a premium, without compromising thermal performance or current handling capability.

A key application for the IPS060N03LG is in synchronous rectification within server and telecom power supplies. Here, its low RDS(on) directly translates to reduced energy loss and lower operating temperatures, enhancing both performance and reliability. It is also extensively used in battery management systems (BMS), automotive subsystems, and high-performance computing, where efficient power distribution is non-negotiable.

ICGOOODFIND: The Infineon IPS060N03LG is a top-tier power MOSFET that sets a high standard for efficiency and performance. Its combination of ultra-low RDS(on), high current capability, and fast switching in a miniature package makes it an indispensable component for designers striving to create the next generation of energy-efficient power management solutions.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, Synchronous Rectification, OptiMOS