Infineon IPB65R660CFD: A High-Performance 650V Superjunction MOSFET for Advanced Power Conversion

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IPB65R660CFD, a 650V Superjunction (SJ) MOSFET engineered to set new benchmarks in advanced power conversion systems. This device exemplifies the cutting-edge of transistor design, offering system designers a powerful component for demanding applications.

A core strength of the IPB65R660CFD lies in its exceptional ultra-low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 66 mΩ and remarkably low gate charge, this MOSFET achieves an outstanding balance between conduction and switching losses. This synergy is critical for high-frequency operation, enabling designers to push the boundaries of switching frequency without incurring prohibitive efficiency penalties. The result is the ability to design smaller, more compact power supplies and converters by using smaller magnetic components and heatsinks, thereby significantly increasing overall power density.

The device is built upon Infineon's advanced CoolMOS™ CFD7 technology platform. This technology is specifically tailored for fast switching and robust performance. A key feature of this platform is the integrated fast body diode, which offers superior reverse recovery characteristics. This is a vital advantage in bridge topologies like power factor correction (PFC) or phase-shifted full-bridge converters, where the body diode's hard commutation behavior can be a limiting factor. The robust diode ensures higher reliability and reduces switching losses during these critical intervals, contributing to cooler operation and greater system longevity.

Furthermore, the IPB65R660CFD is designed for ease of use and system integration. Its industry-standard TO-leadless (TOLL) package offers a compact footprint with superior thermal and electrical performance compared to traditional packages like D2PAK. The low-profile design and exposed top side facilitate excellent heat dissipation, allowing for more efficient thermal management. The Kelvin source connection minimizes the effects of common source inductance, which is crucial for achieving clean and fast switching transitions, further reducing switching losses and electromagnetic interference (EMI).

These attributes make the IPB65R660CFD an ideal choice for a wide array of high-performance applications. It is particularly well-suited for server and telecom switch-mode power supplies (SMPS), solar inverters, industrial motor drives, and electric vehicle charging infrastructure—applications where efficiency, size, and reliability are paramount.

ICGOO

The Infineon IPB65R660CFD represents a significant leap forward in high-voltage switching technology. By masterfully combining ultra-low losses, robust integrated body diode performance, and superior thermal characteristics in a compact package, it provides engineers with a critical component to build the next generation of efficient, power-dense, and reliable energy conversion systems.

Keywords:

1. Superjunction MOSFET

2. High-Efficiency

3. Fast Switching

4. Integrated Body Diode

5. Power Density