Infineon IPD90N04S405ATMA1: High-Performance N-Channel MOSFET for Automotive and Industrial Applications

Release date:2025-11-10 Number of clicks:163

Infineon IPD90N04S405ATMA1: High-Performance N-Channel MOSFET for Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in electronic systems has made the choice of switching components more critical than ever. Addressing these demanding requirements, the Infineon IPD90N04S405ATMA1 stands out as a premier N-Channel power MOSFET engineered to excel in the harsh environments of automotive and industrial applications.

This MOSFET is built on Infineon’s advanced OptiMOS™ 5 40 V technology, a platform renowned for its exceptional performance characteristics. A cornerstone feature of the IPD90N04S405ATMA1 is its extremely low typical on-state resistance (RDS(on)) of just 0.9 mΩ. This minimal resistance is pivotal in minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks or simplified thermal management designs. This is particularly valuable in space-constrained applications like engine control units (ECUs) or compact motor drives.

Furthermore, the device offers outstanding switching performance, enabling operation at higher frequencies. This capability allows designers to reduce the size of passive components like inductors and capacitors, leading to more compact and cost-effective power supply and motor control solutions. The low gate charge (Qg) of the MOSFET further enhances this switching efficiency, ensuring faster turn-on and turn-off times and reducing driving losses.

Robustness and reliability are paramount for components deployed in automotive and industrial settings, where they must endure significant temperature fluctuations, voltage spikes, and continuous operation. The IPD90N04S405ATMA1 is housed in a SuperSO8 package (PG-TDSON-8), which provides superior thermal performance compared to standard SO-8 packages. This superior thermal capability ensures the junction temperature is kept under control, thereby enhancing long-term reliability. The device is also AEC-Q101 qualified, guaranteeing it meets the stringent quality and durability standards required for automotive electronics. Its suitability extends to a wide range of applications, including:

Automotive: BLDC motor control (e.g., pumps, fans, window lift), load switching in 12V battery systems, and solenoid driving.

Industrial: High-current DC-DC converters, motor drives for industrial automation, and power management in server and telecom infrastructure.

In conclusion, the Infineon IPD90N04S405ATMA1 represents a optimal blend of high efficiency, superior switching speed, and proven ruggedness. It empowers design engineers to push the boundaries of performance in next-generation automotive and industrial systems while meeting critical benchmarks for size, cost, and reliability.

ICGOODFIND: The Infineon IPD90N04S405ATMA1 is a top-tier OptiMOS™ 5 MOSFET that delivers exceptional power efficiency and robust performance for demanding automotive and industrial designs, all in a thermally efficient package.

Keywords: Power MOSFET, Low RDS(on), Automotive Grade, OptiMOS™ 5, High Efficiency.

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