Infineon IPP072N10N3G 100V OptiMOS Power MOSFET: Key Features and Application Advantages

The Infineon IPP072N10N3G stands as a prime example of advanced power semiconductor technology, delivering exceptional performance and reliability for modern electronic systems. As part of Infineon’s OptiMOS™ power MOSFET family, this 100V N-channel transistor is engineered to meet the growing demands for efficiency, power density, and thermal management in a wide range of applications.

One of the standout features of the IPP072N10N3G is its extremely low on-state resistance (RDS(on)) of just 7.2 mΩ. This ultra-low resistance minimizes conduction losses, enabling higher efficiency and reduced heat generation. Combined with its superior switching performance, the device allows for operation at higher frequencies, which in turn helps reduce the size of passive components like inductors and capacitors. This trait is especially valuable in space-constrained designs such as DC-DC converters and motor drives.

Thermal performance is another critical strength. The MOSFET is housed in an advanced TO-leadless (TOLL) package, which offers an optimized footprint and improved thermal characteristics compared to traditional packages. The package’s exposed pad allows for efficient heat dissipation, supporting sustained operation under high-current conditions. This makes the device suitable for high-power scenarios including server power supplies, industrial inverters, and automotive systems.

Moreover, the IPP072N10N3G is designed with robustness in mind. It offers high avalanche ruggedness and a strong body diode, enhancing reliability in demanding environments. These attributes ensure stable performance even under voltage spikes or inductive load switching.

From an application perspective, this MOSFET excels in synchronous rectification, motor control, and high-frequency switched-mode power supplies (SMPS). Its ability to operate efficiently at high frequencies makes it ideal for modern computing and telecom power architectures, where energy efficiency and thermal behavior are decisive factors.

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ICGOODFIND: The Infineon IPP072N10N3G combines ultra-low RDS(on), excellent thermal performance, and high switching speed, making it a top-tier solution for high-efficiency and high-power-density designs across industrial, automotive, and computing applications.

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Keywords:

Power MOSFET

Low RDS(on)

High Efficiency

Thermal Performance

Synchronous Rectification